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PD - 94341A
GA600HD25S
StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak
Features
* Standard speed, optimized for battery powered application * Very low conduction losses * HEXFREDTM antiparallel diodes with ultra-soft recovery * Industry standard package * UL recognition pending * Internal thermistor
VCES = 250V VCE(on) typ. = 1.20V
@VGE = 15V, IC = 600A
Benefits
* Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Max.
250 600 1200 1200 1200 17 2500 1920 1000 -40 to +150 -40 to +125
Units
V A
V W C
Thermal / Mechanical Characteristics
Parameter
RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 Mounting Torque, Case-to-Terminal 3,4,5 Weight of Module
Typ.
-- -- 0.04 -- -- -- 400
Max.
0.065 0.20 -- 6.0 5.0 2.0 --
Units
C/W N. m
g
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1
09/02/02
GA600HD25S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES TDP R-T25 Min. 250 -- -- Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -- Forward Transconductance -- Collector-to-Emitter Leaking Current -- -- Diode Forward Voltage - Maximum -- -- Gate-to-Emitter Leakage Current -- Pulse Diode Temp Rise -- Thermistor, Positive Temp Coefficient 779 Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Typ. -- 1.20 1.16 -- -11 720 -- -- 1.5 1.5 -- -- 820 Max. Units Conditions -- VGE = 0V, IC = 1mA 1.30 VGE = 15V, IC = 600A 1.25 V VGE = 15V, IC = 600A, TJ = 125C 6.0 IC = 5.0mA, VCE = 6.0V -- mV/C VCE = 6.0V, I C = 5.0mA,TC= 25/125C -- S VCE = 25V, I C = 600A 2.0 mA VGE = 0V, VCE = 250V 20 VGE = 0V, VCE = 250V, TJ = 125C 1.8 V IF = 300A, VGE = 0V -- IF = 300A, VGE = 0V, TJ = 125C 1.0 A VGE = 14V (18V zeners gate-emitter) 80 C IC = 300A, t = 150msec, Tc =70C 861 I = 100mA,P = 2.5mW/C (see note 1)
Dynamic Characteristics - TJ = 125C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 3825 555 1262 1060 950 846 934 17 105 122 86063 9754 1913 314 80 12513 632 Max. Units Conditions 5738 VCC = 200V, VGE = 15V 832 nC IC = 600A 1893 TJ = 25C -- RG1 = 15, RG2 = 0, -- ns IC = 600A -- VCC = 150V, Inductor load -- VGE = 15V -- mJ See Fig. 18, 20 -- 250 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- ns IC = 600A -- A RG1 = 15 -- C RG2 = 0 -- A/s VCC = 150V di/dt = 500A/s
Notes: 1. The thermistor has an average rate of change of 7 /C between 20C and 125C. Consult Quality Thermistor Inc. data sheet QTI 0805-821J for details
2
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GA600HD25S
500
For both:
400
LOAD CURRENT (A)
Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified
Power Dissipation = 333 W
300
Square wave: 60% of rated voltage
200
I
100
Ideal diodes
0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
10000
IC , Collector Current (A)
T J = 125C
I C , Collector-to-Emitter Current (A)
1000
TJ = 125 C
100
100
T J = 25C
TJ = 25 C
10
VGE = 15V
10 0.6 0.7 0.8 0.9 1.0
80s PULSE WIDTH
1.1
1.2
1.3
1.4
1 4.0
V CE = 25V 80s PULSE WIDTH
5.0 6.0 7.0 8.0
VCE , Collector-to-Emitter Voltage ( V )
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
GA600HD25S
800
1.6 VGE = 15V 80s PULSE WIDTH 1.4
Maximum DC Collector Current(A)
VCE , Collector-to Emitter Voltage (V)
iC = 1000A
600
iC = 600A
1.2
400
200
1.0
iC = 300A
0.8
0
25
50
75
100
125
150
20
40
60
80
100
120
140
TC , Case Temperature ( C)
T J , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
0.1
Thermal Response (ZthJC )
D = 0.50
P DM
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
N otes: 1. Duty fa ctor D = t / t 12
t 1 t2
2. Peak T = PDMx Z thJC + TC J
0.01 0.0001
A
0.001 0.01 0.1 1 10 100 1000
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA600HD25S
160000
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
200V VCC = 250V 400V I C = 600A
16
C, Capacitance (pF)
120000
Cies
80000
12
8
Coes
40000
Cres
0 1 10 100
4
0 0 1000 2000 3000 4000
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
150
1000
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 150V V GE = 15V TJ = 25 C I C = 600A
RG = 15; RG2 = 0 V GE = 15V V CC = 150V I C = 1000A
140
IC = 600A
130
100
I C = 300A
120
110 0 10 20 30 40 50
10 -60 -40 -20 0 20 40 60 80
A 100 120 140 160
RG , Gate Resistance
( )
TJ , Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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5
GA600HD25S
320
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG1 =15;RG2 = 0 RG = T J = 125 C VCC = 150V VGE = 15V
1500
VGE = 17V 20V TJ = 125C VCE measured at terminal ( Peak Voltage )
1200
240
900
SAFE OPERATING AREA
160
600
80
300
0 0 200 400 600 800 1000 1200
0 0 100 200
A
300
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
1000
Fig. 12 - Reverse Bias SOA
20000
I F = 1000A
Instantaneous Forward Current - I F (A)
I F = 600A
TJ = 125C TJ = 25C
100
16000
I F = 300A
Q RR - (nC)
12000
8000
VR = 150V TJ = 125C TJ = 25C
10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
4000 300
400
500
600
Forward Voltage Drop - V FM (V)
di f /dt - (A/s)
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 14 - Typical Stored Charge vs. dif/dt
6
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GA600HD25S
360 120
IF = 1000A IF = 600A
340 100
IF = 1000A IF = 600A IF = 300A
I F = 300A
320
I IRRM - (A)
VR = 150V TJ = 125C TJ = 25C
t rr - (ns)
80
300
60
VR = 150V TJ = 125C TJ = 25C
400 500 600 40 300 400
280 300
di f /dt - (A/s)
di f /dt - (A/s)
500
600
Fig. 15 - Typical Reverse Recovery vs. dif/dt
Fig. 16 - Typical Recovery Current vs. dif/dt
2000
1600
Resistance ( )
1200
800
400
0 -100 -50 0 50 100 150
Temperature ( C )
Fig. 17 - Typical Thermistor Characteristics (See Note1 on page 2)
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7
GA600HD25S
90%
Vge
V C
10% 90%
td(off)
10% IC 5%
t d(on)
tr
tf t=5s Eon Ets= (Eon +Eoff ) Eoff
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt Ic dt tx
tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
Vcc
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd idIc dt Vd dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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GA600HD25S
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL= 0 - 150V
150V 2 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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9
GA600HD25S
Notes:
Repetitive rating; VGE = 17V, pulse width limited by
max. junction temperature.
See fig. 17 For screws M6. Pulse width 50s; single shot.
Case Outline -- DUAL INT-A-Pak
x
x
6 [ . 2 3 6 ] MAX.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/02
10
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